Počet záznamů: 1

Thermally-induced stress in diamond-coated GaN membranes: influence of front- or back-side diamond deposition

SYSNO ASEP	0487097
Druh ASEP	A - Abstrakt
Zařazení RIV	O - Ostatní
Název	Thermally-induced stress in diamond-coated GaN membranes: influence of front- or back-side diamond deposition
Tvůrce(i)	Ižák, Tibor (FZU-D)_RID Jirásek, Vít (FZU-D)_RID Vanko, G. (SK) Dzuba, J. (SK) Babchenko, O. (SK) Držík, M. (SK) Kromka, Alexander (FZU-D)_{RID, ORCID, SAI}
Celkový počet autorů	7
Zdroj.dok.	Book of Abstracts of International Symposium on Surface Science /8./ (ISSS-8). - Tsukuba : SSSJ, 2017
Poč.str.	1 s.
Forma vydání	Online - E
Akce	International Symposium on Surface Science /8./ (ISSS-8)
Datum konání	22.10.2017 - 26.10.2017
Místo konání	Tsukuba
Země	JP - Japonsko
Typ akce	WRD
Jazyk dok.	eng - angličtina
Země vyd.	JP - Japonsko
Klíč. slova	diamond ; GaN ; Raman spectroscopy ; stress
Vědní obor RIV	BL - Fyzika plazmatu a výboje v plynech
Obor OECD	Fluids and plasma physics (including surface physics)
CEP	GBP108/12/G108 GA ČR - Grantová agentura ČR
Institucionální podpora	FZU-D - RVO:68378271
Anotace	Here, we present technological issues in the deposition of diamond films as a heat spreader for GaN membranes. GaN membranes were fabricated by deep reactive ion etching of Si. Deposition of diamond on the “front” or “back-side” of GaN were performed by MWCVD. The thickness of deposited diamond films were 0.4, 3.5 and 12 um. The diamond/GaN heterostructures were studied in terms of thermally-induced stress analysis by Raman spectroscopy and FEM simulations. The stress was evaluated from the Raman shift of the diamond or GaN peak position within the temperature range from 50 to 400°C. The shift was measured at two positions: at the center and edge of the membrane. While in the case of bottom-side deposition the grown diamond layer was relatively homogeneous and covered the whole 3D hole (i.e. including its sidewalls), in the case of top-side deposition a thicker diamond layer was grown at the membrane center.
Pracoviště	Fyzikální ústav
Kontakt	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Rok sběru	2018
Elektronická adresa	http://www.sssj.org/isss8/timetable.html#poster-program

Počet záznamů: 1