Počet záznamů: 1

Diamond growth on horizontally and vertically aligned Si substrates in low pressure surface wave plasma

SYSNO ASEP	0486982
Druh ASEP	A - Abstrakt
Zařazení RIV	O - Ostatní
Název	Diamond growth on horizontally and vertically aligned Si substrates in low pressure surface wave plasma
Tvůrce(i)	Domonkos, Mária (FZU-D)_RID Ižák, Tibor (FZU-D)_RID Varga, Marián (FZU-D)_{RID, ORCID} Potocký, Štěpán (FZU-D)_{RID, ORCID} Kromka, Alexander (FZU-D)_{RID, ORCID, SAI}
Celkový počet autorů	5
Zdroj.dok.	2nd International Conference on Applied Surface Science (ICASS). - Dalian, 2017 / Rudolph H. - ISSN 0169-4332
Poč.str.	1 s.
Forma vydání	Online - E
Akce	International Conference on Applied Surface Science (ICASS) /2./
Datum konání	12.06.2017 - 15.06.2017
Místo konání	Dalian
Země	CN - Čína
Typ akce	WRD
Jazyk dok.	eng - angličtina
Země vyd.	CN - Čína
Klíč. slova	nucleation ; Si substrates ; VerS ; HorS
Vědní obor RIV	BM - Fyzika pevných látek a magnetismus
Obor OECD	Condensed matter physics (including formerly solid state physics, supercond.)
CEP	GBP108/12/G108 GA ČR - Grantová agentura ČR
Institucionální podpora	FZU-D - RVO:68378271
Anotace	This work focuses on spontaneous nucleation on horizontally and vertically aligned nontreated Si substrates. Diamond growth is initiated using a CH₄/H₂/CO₂ gas mixture with varying H content for 5 and 10 hours. As a reference, nucleated substrates are investigated. The SEM and AFM images reveal variation in the properties of samples (size of grains, surface coverage, ND, film thickness) which depend on the sample alignment and Z-axes of VerS. Independently of deposition conditions, the grain size and density and film thickness decreases in the downward direction. The grain population exhibits a polymodal size distribution on the whole substrate for both VerS and HorS. Moreover, for both non-treated and nucleated samples the density and size of diamond grains grown on HorS are similar to the size/density on VerS at a specific Z-position. Our findings confirm that the linear antenna system can be routinely utilised for growing D on 3D substrates.
Pracoviště	Fyzikální ústav
Kontakt	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Rok sběru	2018
Elektronická adresa	https://www.elsevier.com/events/conferences/international-conference-on-applied-surface-science/programme

Počet záznamů: 1