Počet záznamů: 1

The hydrogen plasma doping of nanocrystalline ZnO thin flms

SYSNO ASEP	0483629
Druh ASEP	A - Abstrakt
Zařazení RIV	O - Ostatní
Název	The hydrogen plasma doping of nanocrystalline ZnO thin flms
Tvůrce(i)	Chang, Yu-Ying (FZU-D) Remeš, Zdeněk (FZU-D)_{RID, ORCID} Stuchlík, Jiří (FZU-D)_{RID, ORCID}
Celkový počet autorů	3
Zdroj.dok.	E-MRS 2017 Spring Meeting and Exhibit. - Strasbourg : European Materials Research Society, 2017
Poč.str.	1 s.
Forma vydání	Online - E
Akce	E-MRS 2017 Spring Meeting and Exhibit
Datum konání	22.05.2017 - 26.05.2017
Místo konání	Strasbourg
Země	FR - Francie
Typ akce	WRD
Jazyk dok.	eng - angličtina
Země vyd.	FR - Francie
Klíč. slova	ZnO ; magnetron sputtering ; hydrogen ; doping
Vědní obor RIV	BM - Fyzika pevných látek a magnetismus
Obor OECD	Condensed matter physics (including formerly solid state physics, supercond.)
CEP	GC16-10429J GA ČR - Grantová agentura ČR
Institucionální podpora	FZU-D - RVO:68378271
Anotace	We study the effect on the optical and electrical properties of hydrogen plasma treatment of the nominally undoped, nanocrystalline ZnO thin films deposited by DC reactive magnetron sputtering of Zn target in the gas mixture of argon and oxygen plasma. After hydrogen plasma treatment, the increase of the electrical conductivity and the increase of the infrared optical absorption was detected and related to the increase of the free carrier concentration. To confirm this relation, the mobility and carrier concentration were measured by temperature dependent electrical resistivity and Hall effect using the van der Pauw method. We also investigated the localized defect states below the optical absorption edge using optical absorption spectroscopy and photoluminescence in a broad spectral range from near UV to near IR. We conclude that the increase of the electrical conductivity is indeed confirmed to be related to the increase of the free carrier concentration.
Pracoviště	Fyzikální ústav
Kontakt	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Rok sběru	2018

Počet záznamů: 1