Počet záznamů: 1
Long range influence of macroscopic defects on photoluminescence of GaN/InGaN multiple quantum well structures
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SYSNO ASEP 0479300 Druh ASEP C - Konferenční příspěvek (mezinárodní konf.) Zařazení RIV O - Ostatní Název Long range influence of macroscopic defects on photoluminescence of GaN/InGaN multiple quantum well structures Tvůrce(i) Kuldová, Karla (FZU-D) RID, ORCID
Kretková, Tereza (FZU-D)
Novotný, Radek (FZU-D)
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Zíková, Markéta (FZU-D) RID
Pangrác, Jiří (FZU-D) RID, ORCID, SAICelkový počet autorů 5 Zdroj.dok. EWMOVPE 17 - 17th European Workshop on Metalorganic Vapour Phase Epitaxy. - Grenoble, 2017 / Eymery J. Rozsah stran s. 40-40 Poč.str. 1 s. Akce EWMOVPE 17 - 17th European Workshop on Metalorganic Vapour Phase Epitaxy Datum konání 18.06.2017 - 21.06.2017 Místo konání Grenoble Země FR - Francie Typ akce EUR Jazyk dok. eng - angličtina Země vyd. FR - Francie Klíč. slova MOVPE ; GaN ; photoluminescece ; Raman spectroscopy ; macroscopic defects Vědní obor RIV BM - Fyzika pevných látek a magnetismus Obor OECD Condensed matter physics (including formerly solid state physics, supercond.) Institucionální podpora FZU-D - RVO:68378271 Anotace GaN and InGaN/GaN heterostructures are promising materials for many optoelectronic devices, such as light emitters, high-power and high-frequency electronics, detectors of ionizing radiation, scintillators. Great attention has been paid to optimize growth parameters and decrease density of dislocations and defects in this material. A little outside attention remains study of macroscopic defects. We focus on the influence of macroscopic defects on photoluminescence (PL) of GaN/InGaN multiple quantum well (MQW) structures and present a Raman spectroscopy study of these regions. Some GaN and InGaN/GaN samples exhibit large dark areas with PL decreasing by several orders of magnitude, in the centre of which is a structural defect. Traces of iron, stainless steel or oxides of iron were detected in majority of studied large dark areas by SEM microscopy with EDX and Raman spectroscopy.
Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2018
Počet záznamů: 1