Počet záznamů: 1
Origin of the yellow luminescence band in nitride based semiconductors prepared by the MOVPE technology
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SYSNO ASEP 0464508 Druh ASEP A - Abstrakt Zařazení RIV O - Ostatní Název Origin of the yellow luminescence band in nitride based semiconductors prepared by the MOVPE technology Tvůrce(i) Zíková, Markéta (FZU-D) RID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCIDZdroj.dok. GCCCG-1/DKT2016. - Dresden : TU Dresden, 2016
S. 99Poč.str. 1 s. Forma vydání Tištěná - P Akce German Czechoslovak Conference on Crystal Growth (GCCCG-1) /1./ Datum konání 16.03.2016 - 18.03.2016 Místo konání Dresden Země DE - Německo Typ akce EUR Jazyk dok. eng - angličtina Země vyd. DE - Německo Klíč. slova yellow band luminescence ; GaN ; InGaN ; AlGaN ; MOVPE Vědní obor RIV BM - Fyzika pevných látek a magnetismus CEP GA16-11769S GA ČR - Grantová agentura ČR LO1603 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy Institucionální podpora FZU-D - RVO:68378271 Anotace Nitride semiconductors are the most studied materials nowadays because of their exceptional properties and possible applications. They can be used as light emitting diodes or transistors depending on the material used. A typical feature of the nitride luminescence spectra is a presence of defect interband levels luminescence band. For the luminescence and scintillating applications, it is desirable that the structure has quick response and the decay time is very short, in the order of few nanoseconds. This is the reason why the slow yellow luminescence band is undesirable. It has also high intensity, so it completely shadows the photolumi–nescence of other wavelengths.
In this work studies of two structures will be presented and discussed, mainly the photoluminescence spectra with yellow band luminescence, its origin and some possible solutions to avoid it. First one is the AlGaN/GaN heterostructure. There the connection between v-pits on layer interfaces and yellow luminescence band will be inferred. Second one is the InGaN/GaN heterostructure where the yellow luminescence band is changing its intensity, compared to the photoluminescence of GaN, with changing the excitation intensity, see Fig. 1. Possible explanation will be offered.
Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2017
Počet záznamů: 1