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Nanostructures grown by MOVPE InAs/InGaAs/Ga(Sb)As quantum dot and GaN/InGaN quantum well structures
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SYSNO ASEP 0463746 Druh ASEP A - Abstrakt Zařazení RIV O - Ostatní Název Nanostructures grown by MOVPE InAs/InGaAs/Ga(Sb)As quantum dot and GaN/InGaN quantum well structures Tvůrce(i) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Zíková, Markéta (FZU-D) RID
Vyskočil, Jan (FZU-D) RID
Kuldová, Karla (FZU-D) RID, ORCID
Melichar, Karel (FZU-D)
Hubáček, Tomáš (FZU-D) ORCID
Walachová, J. (CZ)
Vaniš, J. (CZ)
Křápek, V. (CZ)
Humlíček, J. (CZ)
Nikl, Martin (FZU-D) RID, ORCID, SAI
Pacherová, Oliva (FZU-D) RID, ORCID
Brůža, P. (CZ)
Pánek, D. (CZ)
Foltynski, B. (DE)
Oeztuerk, M. (CZ)
Heuken, M. (DE)
Hulicius, Eduard (FZU-D) RID, ORCID, SAIZdroj.dok. GCCCG-1/DKT2016. - Dresden : TU Dresden, 2016
S. 38Poč.str. 1 s. Forma vydání Tištěná - P Akce German Czechoslovak Conference on Crystal Growth (GCCCG-1) /1./ Datum konání 16.03.2016 - 18.03.2016 Místo konání Dresden Země DE - Německo Typ akce EUR Jazyk dok. eng - angličtina Země vyd. DE - Německo Klíč. slova MOVPE ; InAs quantum dot ; GaAsSb SRL ; GaInN quantum well ; GaN ; GaAs Vědní obor RIV BM - Fyzika pevných látek a magnetismus CEP GA13-15286S GA ČR - Grantová agentura ČR GP14-21285P GA ČR - Grantová agentura ČR LM2011026 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy Institucionální podpora FZU-D - RVO:68378271 Anotace This review talk summarizes some of results achieved during last years of our quantum dot(QD) research. We show that the QD shape (aspect ratio and elongation) significantly influence the QD photoluminescence (PL) spectrum. Magnetophotoluminescence (MPL) can
be used for determination of the anisotropy of QDs. While the calculated shifts in magnetic field of the energies of higher radiative transitions are found to be sensitive to the lateral elongation, the shift of the lowest transition is determined mainly by the exciton effective mass. This can be used for determining the effective mass and the elongation fairly reliably from the MPL spectra displaying at least two resolved bands. We found the ways to control the QD elongation for vertically correlated InAs/GaAs QDs and consequently the energy difference between PL transitions by adjusting properly the spacer layer thickness. The main goal was to redshift QD PL emission to telecommunication wavelengths of MOVPE prepared InAs/GaAs QDs using InGaAs or GaAsSb strain reducing layer (SRL).The simulation of electron structure in InAs QDs covered by GaAsSb SRL and our experimental results reveal the importance of increasing QD size for obtaining a longer wavelength PL from the type I heterostructure. The type II structure covered by GaAsSb SRL with Sb content near 30 % enabled us to achieve extremely long emission wavelength at 1.8 μm. The high amount of antimony in the SRL causes the preservation of QD size. Increased QD size prolongs the PL wavelength. The type II structures with ground state electrons confined in InAs QDs and ground state holes in GaAsSb SRL have a strong potential in detector and solar cell applications
as is demonstrated by photocurrent measurement.Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2017
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