Počet záznamů: 1  

Nanostructures grown by MOVPE InAs/InGaAs/Ga(Sb)As quantum dot and GaN/InGaN quantum well structures

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    SYSNO ASEP0463746
    Druh ASEPA - Abstrakt
    Zařazení RIVO - Ostatní
    NázevNanostructures grown by MOVPE InAs/InGaAs/Ga(Sb)As quantum dot and GaN/InGaN quantum well structures
    Tvůrce(i) Hospodková, Alice (FZU-D) RID, ORCID, SAI
    Oswald, Jiří (FZU-D) RID, ORCID
    Pangrác, Jiří (FZU-D) RID, ORCID, SAI
    Zíková, Markéta (FZU-D) RID
    Vyskočil, Jan (FZU-D) RID
    Kuldová, Karla (FZU-D) RID, ORCID
    Melichar, Karel (FZU-D)
    Hubáček, Tomáš (FZU-D) ORCID
    Walachová, J. (CZ)
    Vaniš, J. (CZ)
    Křápek, V. (CZ)
    Humlíček, J. (CZ)
    Nikl, Martin (FZU-D) RID, ORCID, SAI
    Pacherová, Oliva (FZU-D) RID, ORCID
    Brůža, P. (CZ)
    Pánek, D. (CZ)
    Foltynski, B. (DE)
    Oeztuerk, M. (CZ)
    Heuken, M. (DE)
    Hulicius, Eduard (FZU-D) RID, ORCID, SAI
    Zdroj.dok.GCCCG-1/DKT2016. - Dresden : TU Dresden, 2016
    S. 38
    Poč.str.1 s.
    Forma vydáníTištěná - P
    AkceGerman Czechoslovak Conference on Crystal Growth (GCCCG-1) /1./
    Datum konání16.03.2016 - 18.03.2016
    Místo konáníDresden
    ZeměDE - Německo
    Typ akceEUR
    Jazyk dok.eng - angličtina
    Země vyd.DE - Německo
    Klíč. slovaMOVPE ; InAs quantum dot ; GaAsSb SRL ; GaInN quantum well ; GaN ; GaAs
    Vědní obor RIVBM - Fyzika pevných látek a magnetismus
    CEPGA13-15286S GA ČR - Grantová agentura ČR
    GP14-21285P GA ČR - Grantová agentura ČR
    LM2011026 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy
    Institucionální podporaFZU-D - RVO:68378271
    AnotaceThis review talk summarizes some of results achieved during last years of our quantum dot(QD) research. We show that the QD shape (aspect ratio and elongation) significantly influence the QD photoluminescence (PL) spectrum. Magnetophotoluminescence (MPL) can
    be used for determination of the anisotropy of QDs. While the calculated shifts in magnetic field of the energies of higher radiative transitions are found to be sensitive to the lateral elongation, the shift of the lowest transition is determined mainly by the exciton effective mass. This can be used for determining the effective mass and the elongation fairly reliably from the MPL spectra displaying at least two resolved bands. We found the ways to control the QD elongation for vertically correlated InAs/GaAs QDs and consequently the energy difference between PL transitions by adjusting properly the spacer layer thickness. The main goal was to redshift QD PL emission to telecommunication wavelengths of MOVPE prepared InAs/GaAs QDs using InGaAs or GaAsSb strain reducing layer (SRL).The simulation of electron structure in InAs QDs covered by GaAsSb SRL and our experimental results reveal the importance of increasing QD size for obtaining a longer wavelength PL from the type I heterostructure. The type II structure covered by GaAsSb SRL with Sb content near 30 % enabled us to achieve extremely long emission wavelength at 1.8 μm. The high amount of antimony in the SRL causes the preservation of QD size. Increased QD size prolongs the PL wavelength. The type II structures with ground state electrons confined in InAs QDs and ground state holes in GaAsSb SRL have a strong potential in detector and solar cell applications
    as is demonstrated by photocurrent measurement.
    PracovištěFyzikální ústav
    KontaktKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Rok sběru2017
Počet záznamů: 1  

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