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InGaN/GaN MQWs for scintillators perspectives and problems
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SYSNO ASEP 0463677 Druh ASEP A - Abstrakt Zařazení RIV O - Ostatní Název InGaN/GaN MQWs for scintillators perspectives and problems Tvůrce(i) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Zíková, Markéta (FZU-D) RID
Hubáček, Tomáš (FZU-D) ORCID
Kuldová, Karla (FZU-D) RID, ORCID
Oswald, Jiří (FZU-D) RID, ORCIDZdroj.dok. GCCCG-1/DKT2016. - Dresden : TU Dresden, 2016
S. 101Poč.str. 1 s. Forma vydání Tištěná - P Akce German Czechoslovak Conference on Crystal Growth (GCCCG-1) /1./ Datum konání 16.03.2016 - 18.03.2016 Místo konání Dresden Země DE - Německo Typ akce EUR Jazyk dok. eng - angličtina Země vyd. DE - Německo Klíč. slova MOVPE ; GaInN multiple quantum well ; GaN ; scintillator Vědní obor RIV BM - Fyzika pevných látek a magnetismus CEP GA16-11769S GA ČR - Grantová agentura ČR Institucionální podpora FZU-D - RVO:68378271 Anotace The III-nitrides became very important compound semiconductors in last twenty years and are used in many applications indispensable in nowadays life such as effective white diodes, blue lasers or high electron mobility transistors (HEMTs).
Large band gap semiconductors such as GaN or ZnO are suitable for scintillator and detector structures for ionizing radiation detection. While ZnO is used in scintillators for several decades, the promising application of GaN epitaxial layers in scintillator structures has attracted scientific attention in last few years. Besides the strong exciton binding energy GaN has also an advantage of high radiation resistance. So the detectors of ionizing radiation and scintillators seem to be a new and perspective application of nitride semiconductors.
In principle the scintillating nitride heterostructure could be based on InGaN/GaN multiple quantum well (QW) structure similarly to LED but with some differences in structure design. The structure should contain higher number of QD layers compared to LEDs, In content in QW should be higher to obtain sufficient carrier confinement for thin thickness of QWs. The p-n junction is not required; however, some n-type doping is necessary in case of detection of charged particle radiation like electrons or protons. Active part of the structure for scintillators has to be much thicker than in LEDs. Another problem for fast scintillators is the slow defect green-yellow photoluminescence band, which become dominant when the luminescence is excited by ionizing radiation, see Fig. 1. Results obtained on several type of structures designed for scintillators will be discussed.
Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2017
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